Accession Number : ADD010401
Title : Method of Forming Hyperabrupt Interface in a GaAs Substrate.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder,Max N
Report Date : 05 Jul 1983
Pagination or Media Count : 4
Abstract : A method of fabricating improved semiconductor devices, such as FET's, which require or are improved by a hyperabrupt interface between the active channel and the underlying insulating region. A substrate, such as GaAs, is polished and then implanted with light ions, such as protons, to amorphize the crystal structure down to a certain depth determined by the ion-beam accelerating voltage and the ion fluence level. The crystal is damaged but not amorphized below the lowest amorphization depth. The interface between the amorphized and the non-amorphized, but damaged, regions is a relatively narrow region which will become a hyperabrupt junction. The substrate is then implanted with donor ions, such as Si, in accordance with the requirements of the device to be fabricated and under conditions which provide a retrograde donor ion concentration profile with depth. An annealing/donor activating step is now performed at a relatively low temperature (600 degrees C. or less) to avoid breaking down the hyperabrupt interface.
Descriptors : *Patents, *Substrates, *Gallium arsenides, *Ion implantation, Interfaces, Fabrication, Methodology, Insulation, Ions, Protons, Polishing, Crystal structure, Inventions
Subject Categories : Electrical and Electronic Equipment
Nuclear Physics & Elementary Particle Physics
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE