Accession Number : ADD010452

Title :   Write Mode Circuitry for Photovoltaic Ferroelectric Memory Cell.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Brody,Philip S

Report Date : 23 Nov 1982

Pagination or Media Count : 8

Abstract : Non-volatile semiconductor matrix random access and electrically alterable programmable read-only memories are disclosed. Each memory cell of the matrix memory includes a photovoltaic ferroelectric element which is remanently polarized with a write signal, and which when illuminated, produces a photovoltage which causes a field effect transistor to assume one of two states. Variable impedance means, for example, at least a diode or a breakdown diode is connected in each cell for providing a low impedance when the write gate pulse is applied to the photovoltaic ferroelectric element and for providing a high impedance when the photovoltage produced by the photovoltaic ferroelectric element is applied to the field effect transistor gate. If power to the memory is lost, by illuminating the photovoltaic ferroelectric element, the field effect transistor may be caused to assume the state which it was in before loss of power.

Descriptors :   *Patents, *Memory devices, *Photovoltaic effect, *Ferroelectricity, Writing, Read write memories, Semiconductors, Diodes, Electronic equipment, Inventions

Subject Categories : Computer Hardware
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE