Accession Number : ADD010523

Title :   High-Performance Bipolar Microwave Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder,Max N

Report Date : 19 Apr 1983

Pagination or Media Count : 5

Abstract : Document describes a high-frequency transistor and method of making same wherein the parasitic capacitance between base and collector is reduced. The collector layer of GaAs (Gallium Arsenide) is impregnated with boron ions to form an insulative region under the base contact structure thereby reducing the capacitance in this region and leaving only the region underlying the emitter structure as the active transistor region.

Descriptors :   *Patents, *Bipolar transistors, *Microwave equipment, High frequency, Capacitance, Gallium arsenides, Boron, Ions, Emitters

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE