Accession Number : ADD010541

Title :   Process for the Deposition of III-V Compounds Using Ultra-Violet Radiation.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Quinlan,Kenneth P

Report Date : 16 Aug 1983

Pagination or Media Count : 24

Abstract : The present invention relates to a process for depositing III-V compounds and their alloys as epitaxial films onto semiconductor substrates that are crystallographically compatible with said films. More particularly, this invention relates to a vapor phase epitaxy technique which uses ultraviolet irradiation to induce photolysis of phosphine to provide for the deposition of thin layers of III-V compounds and their alloys on suitable semiconductor substrates. The resulting epitaxial structures find particular utility in the fabrication of double heterostructure lasers, light emitting diodes and field effect transistors.

Descriptors :   *Patent applications, *Epitaxial growth, *Vapor deposition, *Semiconducting films, Substrates, Vapor phases, Ultraviolet radiation, Irradiation, Photolysis, Phosphine, Thin films, Group III compounds, Group V compounds, Surfaces, Semiconductors

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE