Accession Number : ADD010568
Title : Method and Solution for Etching Indium Antimonide.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Herning,Paul E ; Sutcliffe,Edward Y
Report Date : 02 Aug 1983
Pagination or Media Count : 4
Abstract : A method for delineating defects in the (111) surface of an indium antimonide crystal wafer by treating said surface with a 5 percent solution of iodine in N, N-dimethylacetamide to form triangularly shaped etch pits in the defect area.
Descriptors : *Patents, *Indium antimonides, *Etching, *Methodology, Defects(Materials), Crystals, Surface properties, Pitting, Solutions(Mixtures), Iodine, Acetamides, Surface analysis, Semiconductors
Subject Categories : Test Facilities, Equipment and Methods
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE