Accession Number : ADD010568

Title :   Method and Solution for Etching Indium Antimonide.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Herning,Paul E ; Sutcliffe,Edward Y

Report Date : 02 Aug 1983

Pagination or Media Count : 4

Abstract : A method for delineating defects in the (111) surface of an indium antimonide crystal wafer by treating said surface with a 5 percent solution of iodine in N, N-dimethylacetamide to form triangularly shaped etch pits in the defect area.

Descriptors :   *Patents, *Indium antimonides, *Etching, *Methodology, Defects(Materials), Crystals, Surface properties, Pitting, Solutions(Mixtures), Iodine, Acetamides, Surface analysis, Semiconductors

Subject Categories : Test Facilities, Equipment and Methods
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE