Accession Number : ADD010575

Title :   Technique of Silicon Epitaxial Refill.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Yuan,Han-Tzong ; Anderson,Roger N

Report Date : 23 Aug 1983

Pagination or Media Count : 6

Abstract : A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.

Descriptors :   *Patents, *Silicon compounds, *Epitaxial growth, *Integrated circuits, *Fabrication, Oxides, Layers, Etching, Chlorides, Substrates, Surfaces, Metal oxide semiconductors

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE