Accession Number : ADD010575
Title : Technique of Silicon Epitaxial Refill.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Yuan,Han-Tzong ; Anderson,Roger N
Report Date : 23 Aug 1983
Pagination or Media Count : 6
Abstract : A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.
Descriptors : *Patents, *Silicon compounds, *Epitaxial growth, *Integrated circuits, *Fabrication, Oxides, Layers, Etching, Chlorides, Substrates, Surfaces, Metal oxide semiconductors
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE