Accession Number : ADD010579
Title : Fabrication of Gallium Arsenide-Germanium Heteroface Junction Device.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Rahilly,W Patrick
Report Date : 23 Aug 1983
Pagination or Media Count : 7
Abstract : Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.
Descriptors : *Patents, *Gallium arsenides, *Germanium, *Heterojunctions, *Doping, *Semiconductor devices, Fabrication, Solar cells, Group I compounds, Lithium, Sodium, Potassium, P type semiconductors, N type semiconductors
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE