Accession Number : ADD010615

Title :   Normally Off InP Field Effect Transistor Making Process.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Collins,D A ; Lile,D L

Report Date : 08 Feb 1983

Pagination or Media Count : 5

Abstract : A normally off insulated gate field effect transistor having a p-type single crystal InP substrate with source and drain contacts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate. (Author)

Descriptors :   *Patents, *Field effect transistors, *P type semiconductors, *Indium phosphides, *Gates(Circuits), Epitaxial growth, Single crystals, Silicon dioxide, Electrodes, Layers, Substrates

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE