Accession Number : ADD010766

Title :   Method for making Non-Alloyed Heterojunction Ohmic Contacts.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Stall,R A ; Wood,E C ; Eastman,L F

Report Date : 16 Aug 1983

Pagination or Media Count : 4

Abstract : Ultra low resistance heterojunction ohmic contacts to semiconductors such as gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a nonalloyed heterojunction ohmic contact having a very low specific resistance. (Author)

Descriptors :   *Patents, *Electric contacts, Heterojunctions, Metal films, Gallium arsenides, Doping, Germanium, Electrical resistance, Single crystals, Epitaxial growth, Molecular beams

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE