Accession Number : ADD010795

Title :   Fabrication of Submicron-Wide Lines with Shadow Depositions.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Jelks,E C ; Kerber,G L

Report Date : 11 Oct 1983

Pagination or Media Count : 9

Abstract : A method of fabricating lines of submicron width, comprising the steps of: providing a substrate, depositing a first layer of metal upon the substrate; spinning a photoresist layer on the metal; patterning the photoresist layer; etching the metal to undercut the photoresist edge, e.g. with a mixture for approximately ten minutes at room temperature; depositing a second layer of metal at an angle 01 to the photoresist edge, thereby defining a long, submicron-wide opening to the underlying substrate; depositing a chosen material, for example, metallic or semiconductor, for the bridge onto the substrate at an angle of 02 through the submicron-wide opening; and removing undesired material surrounding the bridge by dissolving the photoresist in hot acetone followed by stripping the remaining two layers of metal with etchant. (Author)

Descriptors :   *Patents, *Microelectronics, *Superconductors, *Semiconductors, *Electric bridges, *Lines(Geometry), *Shadows, Deposition, Metals, Substrates, Fabrication, Photoresistors

Subject Categories : Electrooptical and Optoelectronic Devices
      Test Facilities, Equipment and Methods
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE