Accession Number : ADD010808

Title :   Heterojunction-Diode Transistor EBS Amplifier.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Wieder,H H

Report Date : 18 Oct 1983

Pagination or Media Count : 8

Abstract : An improved apparatus modulates greater currents at higher frequencies over extended bandwidths. In addition to conventional biasing and modulation a beam of electrons is directed onto a heterojunction-diode device disposed to receive the modulating electron beam. The heterojunction diode device is fabricated from two different semiconducting materials having identical crystalline lattice structures, different fundamental energy bandgaps and different impurity types of different concentrations. This combination of properties assures greater output currents, higher frequency modulation and increased bandwidths. (Author)

Descriptors :   *Patents, *Electron tube targets, *Semiconductor diodes, *Electron beams, *Transistor amplifiers, *Junction diodes, Epitaxial growth, Heterojunctions, Crystal lattices, Indium, Arsenides, Modulation, Gallium arsenides, Structures, Frequency, Materials, Currents, Modulation, Bandwidth, Semiconductors, Crystals, Bias, Electrons, Output, Impurities, Diodes

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE