Accession Number : ADD010823

Title :   A Semi-Insulating InGaAs Epitaxial Layer.

Descriptive Note : Patent Application,


Personal Author(s) : Clawson,A R ; Elder,D I ; Weider,H H

Report Date : 03 Oct 1983

Pagination or Media Count : 11

Abstract : The invention presents a high resistivity, semi-insulating layer of the semiconductor material comprised of InGaAs prepared by liquid phase epitaxial growth upon a lattice-matched semiconducting substrate. To achieve the high resistivity, semi-insulating properties the semiconductor material comprising InGaAs is doped with an element selected from the group consisting of Mn, Cr, Ni, Co, and Fe. A method is described wherein Fe-doped In0.53Ga0.47As is grown by liquid phase epitaxial means upon an InP substrate. The growth procedures involve a proper selection of the amount of dopant to be used, e.g..005 to .005% mole fraction Fe, and the times and temperatures required for bake out of the doped composition of In0.53Ga0.47As. (Author)

Descriptors :   *Patent applications, *Semiconductors, *Insulation, *Indium, *Gallium arsenides, Epitaxial growth, Liquid phases, Layers, Substrates, Doping, Iron, Indium phosphides, Electrical resistance, High rate

Subject Categories : Miscellaneous Materials
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE