Accession Number : ADD010850

Title :   Technique for the Growth of Compositionally Ungraded Single Crystals of Solid Solutions.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Marshall,R C

Report Date : 15 Oct 1982

Pagination or Media Count : 25

Abstract : This invention describes a modified method of growing high purity, compositionally upgraded, single crystals of multicomponent solid solutions by the Czochralski, Kyropoulos, Bridgman or other related melt growth technique. In the method of this invention, the container or crucible used to contain the multicomponent crystal growing melt is fabricated from the higher melting point component of the multicomponent melt while lower melting point of the lower melting point component to a temperature which is the exact melting point of the solid solution, or crystal alloy desired. This will dissolve an amount of the crucible material (higher melting point component) equal to the exact amount required to produce a solid solution having the desired composition. A seed is then introduced into the melt and normal crystal pulling is initiated resulting in the growth of a compositionally upgraded crystal having a uniform compositional content throughout its structure. (Author)

Descriptors :   *Patent applications, *Crystal growth, *Single crystals, Solid solutions, Czochralski crystals, Melts, Crucibles, Fabrication, Melting point, Alloys, Seeds, Purity, Composition(Property)

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE