Accession Number : ADD010879

Title :   Integrated Optical Grating Device by Thermal SiO2 Growth on Si,

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Thompson,D E

Report Date : 17 Jan 1984

Pagination or Media Count : 5

Abstract : Disclosed is a method of producing an integrated optical grating device having extremely low scattering losses. The method employs a highly polished and prepared silicon chip for receiving a grating pattern or any other surface relief feature on the silicon wafer surface for its predetermined use. The pattern after it is generated is etched to a predetermined period, for example, when the pattern is for a waveguide device. An SiO2 growth layer is thermally grown to a thickness of about 4 to 8 micrometers to replicate the generated pattern in the SiO2 growth layer. This method yields a waveguide or similar optical grating device having undulations of extremely low values as determined by SEM photographs of this device. (Author)

Descriptors :   *Patents, *Optical waveguides, *Gratings(Spectra), Integrated systems, Silicon dioxide, Silicon, Chips(Electronics), Wafers, Surfaces, Patterns, Etching, Layers, High temperature, Thickness, Scattering, Low loss

Subject Categories : Electrical and Electronic Equipment
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE