Accession Number : ADD010933
Title : Low Resistance OHMIC Contact.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Tabatabaie-Alavi,K ; Choudhury,A N M M ; Slater-Gabriel,N J ; Fonstad,C G
Report Date : 08 Nov 1983
Pagination or Media Count : 5
Abstract : This document describes a method for obtaining a very low resistance ohmic contact on p-type Indium Phosphide by light-assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, has been used for producting patterned, small area contacts on device structures and is compatible with established n-type ohmic contacting procedures.
Descriptors : *Patents, *Electric contacts, P type semiconductors, Microelectronics, Indium phosphides, Electrical resistance, Low level, Light scattering, Ohmmeters, Plating, Gold, Zinc
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE