Accession Number : ADD010933

Title :   Low Resistance OHMIC Contact.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Tabatabaie-Alavi,K ; Choudhury,A N M M ; Slater-Gabriel,N J ; Fonstad,C G

Report Date : 08 Nov 1983

Pagination or Media Count : 5

Abstract : This document describes a method for obtaining a very low resistance ohmic contact on p-type Indium Phosphide by light-assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, has been used for producting patterned, small area contacts on device structures and is compatible with established n-type ohmic contacting procedures.

Descriptors :   *Patents, *Electric contacts, P type semiconductors, Microelectronics, Indium phosphides, Electrical resistance, Low level, Light scattering, Ohmmeters, Plating, Gold, Zinc

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE