Accession Number : ADD010950

Title :   MBE (Molecular Beam Epitaxy) Growth Technique for Matching Superlattices Grown on GaAs Substrates.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Chang,C A ; Chan,L L ; Esaki,L

Report Date : 02 Mar 1984

Pagination or Media Count : 34

Abstract : Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and in1-xGaxAs-GaSb1-yAsy superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice. (Author)

Descriptors :   *Patent applications, *Epitaxial growth, *Molecular beams, Crystal lattices, Semiconducting films, Layers, Substrates, Concentration(Chemistry), Gradients, Indium compounds, Arsenides, Gallium antimonides, Gallium arsenides, Semiconductor devices, Thin films, Matching, Alignment, Dislocations, Interfaces

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE