Accession Number : ADD010968

Title :   Monolithic Planar Doped Barrier Subharmonic Mixer.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Dixon,S , Jr ; Malik,R J

Report Date : 23 Mar 1984

Pagination or Media Count : 11

Abstract : A single planar doped barrier diode is grown by the selective deposition of gallium arsenide using molecular beam epitaxy (MBE) in the center of a gallium arsenide dielectric waveguide member mounted on a ground plane. The waveguide member includes two portions which extend in opposite directions and terminating in respective metal to dielectric waveguide transition sections which are coupled to an RF input signal and local oscillator signal, respectively. The planar doped barrier diode operates as an intrinsic subharmonic mixer and accordingly the local oscillator signal has a frequency of one half the input signal frequency. An IF output signal is coupled from the mixer diode to a microstrip transmission line formed on an insulating isolators are additionally included on the dielectric waveguide segments to mutually isolate the input signal and local oscillator signal. A monolithic form of circuit fabrication is this provided which allows the planar doped barrier mixer circuit to be extremely small and the cost of mass producing such a circuit to be very economical. (Author)

Descriptors :   *Patent applications, *Mixers(Electronics), *Doping, *Gallium arsenides, *Epitaxial growth, *N type semiconductors, *P type semiconductors, Waveguides, Dielectrics, Epitaxial growth, Transitions, Local oscillators, Substrates, Molecular beams, Fabrication, Signals, Circuits, Insulation, Transmission lines, Radiofrequency, Mass, Input, Isolation, Strip transmission lines, Output, Frequency, Circuits, Costs

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE