Accession Number : ADD010984

Title :   Method for Forming High Superconducting Niobium Nitride Film at Ambient Temperature.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Cukauskas,E J

Report Date : 17 Jan 1984

Pagination or Media Count : 4

Abstract : A method of forming a high Tc niobium nitride (NbN) film on a substrate at ambient substrate temperature. The method includes the step of reactively sputtering NbN onto the substrate in an argon-nitrogen atmosphere with controlled amounts of methane added to the argon-nitrogen gas mixture. (Author)

Descriptors :   *Patents, *Superconductors, *Thin films, *Niobium compounds, *Nitrides, Sputtering, Deposition, Substrates, Transition temperature, Argon, Nitrogen, Methane, Mixtures, Atmospheres, Electrodes, Josephson junctions, Tunneling(Electronics)

Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE