Accession Number : ADD011017

Title :   Quaternary Alloy.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Hawrylo,F Z

Report Date : 27 Mar 1984

Pagination or Media Count : 4

Abstract : A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the information of p-n junctions. (Author)

Descriptors :   *Patents, *Alloys, *Quaternary compounds, *Semiconductors, *Epitaxial growth, Phosphorus, Indium, Tellurium, Zinc, Substrates, Indium phosphides, Semiconductor junctions, N type semiconductors, P type semiconductors, Light emitting diodes, Fiber optics transmission lines

Subject Categories : Metallurgy and Metallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE