Accession Number : ADD011067

Title :   Semiconductor Multipactor Device.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Evankow,J D , Jr

Report Date : 21 May 1984

Pagination or Media Count : 13

Abstract : The placement of one or a pair of suitably biased thin semiconductor epitaxial layers on the secondary emission surface of a multipactor device provides an improvement of devices which operate in accordance with the principle of multipactoring. A multipactor device is disclosed having a multipactor region comprised of at least one surface formed of one or more thin epitaxial semiconductor layers, the outer layer being of n-type semiconductor material consisting of, for example, gallium phosphide covered with cesium which provides an abundance of free electrons at the surface when biased in the forward direction. In one disclosed configuration the multipactor region is located in a section of waveguide while in another arrangement the region is located in a section of waveguide while in another arrangement in the region is located on the top of a post in a multipactor input cavity. (Author)

Descriptors :   *Patent applications, *Semiconductor devices, *Layers, *Epitaxial growth, Gallium phosphides, Waveguides, Secondary emission, N type semiconductors, Cesium, Electron beams

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE