Accession Number : ADD011123

Title :   Method for Fabricating MNOS Structures Utilizing Hydrogen Ion Implantation.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Saks,N S

Report Date : 08 May 1984

Pagination or Media Count : 5

Abstract : An improved method for reducing the density of electronic trapping states and fixed insulator charge in the thin oxide layer of an MNOS structure. The method includes the steps of implanting hydrogen ions in field region of the oxide layer and annealing the MNOS structure at 400 deg C. to cause the ions to diffuse laterally into the gate region of the oxide layer. (Author)

Descriptors :   *Patents, *Metal nitride oxide semiconductors, *Fabrication, Ion implantation, Annealing, Hydrogen, Ions, Oxides, Thin films, Electronic states, Trapping(Charged particles), Layers, Diffusion

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE