Accession Number : ADD011188
Title : Chemical Etching of Transformed Structures.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Aklufi,M E
Report Date : 22 May 1984
Pagination or Media Count : 6
Abstract : A maskless techniques is disclosed for shaping semiconductor materials by forming areas that are selectively etchable with respect to the rest of the structure. In one embodiment of this invention, a body of amorphous material is subjected to radiation by a focused energy beam so as to convert a predetermined region of the amorphous material into a region of crystalline material. The converted region etches at a slower rate than the non-converted amorphous material.
Descriptors : *Patents, *Semiconductors, *Etching, Phase transformations, Semiconductors, Amorphous materials, Ion beams, Shape, Masking, Crystals
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE