Accession Number : ADD011264

Title :   Radiation Hardened Ion-Implanted GaAs Field Effect Transistor and Method for Making the Same Specification.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : King,E E ; Anderson,W T , Jr

Report Date : 18 Jul 1983

Pagination or Media Count : 18

Abstract : The present Invention is directed to a novel gallium arsenide field effect transistor and, more particularly, to a novel gallium arsenide field effect transistor which exhibits greatly improved tolerance to the effects of pulsed ionizing radiation.

Descriptors :   *Patent applications, *Radiation hardening, *Ion implantation, *Field effect transistors, *Gallium arsenides, Specifications, Pulses, Ionizing radiation

Subject Categories : Electrical and Electronic Equipment
      Nuclear Radiation Shield, Protection & Safety

Distribution Statement : APPROVED FOR PUBLIC RELEASE