Accession Number : ADD011264
Title : Radiation Hardened Ion-Implanted GaAs Field Effect Transistor and Method for Making the Same Specification.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : King,E E ; Anderson,W T , Jr
Report Date : 18 Jul 1983
Pagination or Media Count : 18
Abstract : The present Invention is directed to a novel gallium arsenide field effect transistor and, more particularly, to a novel gallium arsenide field effect transistor which exhibits greatly improved tolerance to the effects of pulsed ionizing radiation.
Descriptors : *Patent applications, *Radiation hardening, *Ion implantation, *Field effect transistors, *Gallium arsenides, Specifications, Pulses, Ionizing radiation
Subject Categories : Electrical and Electronic Equipment
Nuclear Radiation Shield, Protection & Safety
Distribution Statement : APPROVED FOR PUBLIC RELEASE