Accession Number : ADD011390

Title :   Diffusion Barrier for Long Wavelength Laser Diodes.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Hawrylo,F Z

Report Date : 23 Oct 1984

Pagination or Media Count : 5

Abstract : A diffusion barrier is created in a n-type heterojunction layer adjacent to the active region of a semiconductor laser by doping the n-type layer with a periodic table group VI element. The diffusion barrier in the n-type layer prevents the migration of acceptors into that layer. The group VI elements are, in particular, sulfur (S), selinium (Se), and tellurium (Te). The acceptor of concern is zinc (Zn). (Author)

Descriptors :   *Patents, *Semiconductor lasers, *Indium phosphides, *N type semiconductors, *Heterojunctions, Doping, Electron acceptors, Gallium arsenides, Migration, Long wavelengths, Barriers, Zinc, Sulfur, Layers, Tables(Data), Diffusion, Diodes, Tellurium, Lasers, Inventions

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE