Accession Number : ADD011399

Title :   Buried Junction Enhanced Schottky Barrier Device.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Skolnik,L H

Report Date : 22 Aug 1984

Pagination or Media Count : 7

Abstract : The present invention contemplates a completely submersed Schottky barrier junction in order to enhance collection efficiency of photogenerated carriers. Using a buried active back-to-back thin junction allows collection of carriers generated with momentum vectors in both the forward and reverse directions. Thus, the quantum efficiency and sensitivity of the infrared detector is substantially enhanced. In addition, thicker Schottky metallizations can be used to enhance spectral absorption of incident infrared lights. (Author)

Descriptors :   *Patent applications, *Infrared detectors, *Silicon, *Schottky barrier devices, *Junction diodes, *P type semiconductors, Orientation(Direction), Quantum efficiency, Reversible, Absorption spectra, Buried objects, Efficiency, Aluminum, Collection, Iridium, Junctions, Platinum

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE