Accession Number : ADD011482

Title :   Liquid-Phase Epitaxial Growth of CdTe on HgCdTe.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Wang,C C ; Chu,M

Report Date : 02 Nov 1982

Pagination or Media Count : 6

Abstract : A HgCdTe monolithic focal plane is developed by first growing by liquid-phase epitaxial growth a GhCdTe epilayer with a desired Cd composition on a CdTe substrate, and then by growing a CdTe epilayer on the HgCdTe epilayer. In the resulting structure the HgCdTe layer is designed to sense IR radiation, and the CdTe substrate and the CdTe epilayer are effective in their function as radiation transmitter and as a signal processing. The resulting structure is a heterojunction structure which detects low infrared (IR) energy in the narrow gap semiconductor and transfer the resulting charges to the wider gap semiconductor for signal processing.

Descriptors :   *Patents, *Epitaxial growth, *Cadmium tellurides, *Heterojunctions, *Focal planes, Mercury compounds, Liquid phases, Layers, Substrates, Monolithic structures(Electronics), Narrow gap semiconductors, Infrared radiation, Detection, Signal processing, Tin

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE