Accession Number : ADD011482
Title : Liquid-Phase Epitaxial Growth of CdTe on HgCdTe.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC
Personal Author(s) : Wang,C C ; Chu,M
Report Date : 02 Nov 1982
Pagination or Media Count : 6
Abstract : A HgCdTe monolithic focal plane is developed by first growing by liquid-phase epitaxial growth a GhCdTe epilayer with a desired Cd composition on a CdTe substrate, and then by growing a CdTe epilayer on the HgCdTe epilayer. In the resulting structure the HgCdTe layer is designed to sense IR radiation, and the CdTe substrate and the CdTe epilayer are effective in their function as radiation transmitter and as a signal processing. The resulting structure is a heterojunction structure which detects low infrared (IR) energy in the narrow gap semiconductor and transfer the resulting charges to the wider gap semiconductor for signal processing.
Descriptors : *Patents, *Epitaxial growth, *Cadmium tellurides, *Heterojunctions, *Focal planes, Mercury compounds, Liquid phases, Layers, Substrates, Monolithic structures(Electronics), Narrow gap semiconductors, Infrared radiation, Detection, Signal processing, Tin
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE