Accession Number : ADD011557

Title :   Process for the Epitaxial Deposition of III-V Compounds Utilizing a Continuous In-Situ Hydrogen Chloride Etch.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Quinlan,K P ; Erstfeld,T E

Report Date : 18 Dec 1984

Pagination or Media Count : 7

Abstract : The present invention relates, in general, to a process for depositing III-V semiconducter compounds as epitaxial films onto semiconductor substrates which are crystallographicaly compatible with said films. In a more particular aspect, this invention relates to a process for effecting a continuous, insitu, hydrogen chloride etch during the vapor phase epitaxial deposition of III-V mixed compounds onto semiconductor compounds. The resulting epitaxial structures find particular utility in the fabrication of double heterostructure lasers, light-emitting diodes and field effect transistors. III-V semiconductor compounds, as is well understood by those skilled in semiconductor technology, are those which include elements from group III and group V of the Periodic Table of Elements. The components can be binary, ternary, or quaternary mixtures of any of those elements.

Descriptors :   *Patents, *Vapor deposition, *Group III compounds, *Group IV compounds, *Semiconductors, *Epitaxial growth, Semiconductor devices, Semiconducting films, Vapor phases, Hydrogen chloride, Etching, Deposition

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE