Accession Number : ADD011578
Title : Monolithic Planar Doped Barrier Limiter.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC
Personal Author(s) : Dixon,S , Jr ; AuCoin,T R ; Malik,R J
Report Date : 25 Feb 1985
Pagination or Media Count : 11
Abstract : This patent application describes a passive millimeter wave image guide power limiter comprising a length of dielectric transmission line or waveguide for millimeter wave frequencies located on a relatively thin conductive ground plane forming thereby an image guide and including a planar doped barrier diode structure formed in the dielectric transmission line with the planar doped barrier structure being integrally grown in a slot milled in the constituent material, i.e. gallium arsenide, of the waveguide transversely across the width dimension thereof so as to be orientated perpendicular to the flow of RF power being propagated along its length dimension. The planar doped barrier structure becomes conductive at a predetermined power level to reflect any further incident RF power back toward the power source.
Descriptors : *PATENT APPLICATIONS, *LIMITERS, MATERIALS, GALLIUM ARSENIDES, FREQUENCY, MILLIMETER WAVES, POWER LEVELS, RADIOFREQUENCY POWER, SIZES(DIMENSIONS), WIDTH, DIELECTRICS, TRANSMISSION LINES, LENGTH, POWER SUPPLIES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE