Accession Number : ADD011617

Title :   Dual Species Ion Implantation of Ternary Compounds Based on In-Ga-As.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Tabatabaie-Alavi,K ; Choudhury,A N M M ; Gabriel,N J S ; Fonstad,C G

Report Date : 22 Jan 1985

Pagination or Media Count : 7

Abstract : A method for Ion implantation using multiple energy Be+ to produce p-type regions in N-IN(.53)GA(.47)AS. A simple technique is used to develop capless annealing of InGaAs up to 700 C. The ion implantation of silicon is then accomplished to create n+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.

Descriptors :   *PATENTS, *ION IMPLANTATION, *P TYPE SEMICONDUCTORS, *SILICON, *INDIUM COMPOUNDS, GALLIUM ARSENIDES, ANNEALING, DOPING, TERNARY COMPOUNDS, BERYLLIUM, LAYERS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE