Accession Number : ADD011654
Title : Heat Pipe and Method of making same.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Ahern,
Report Date : 06 Feb 1985
Pagination or Media Count : 15
Abstract : The present invention relates generally to semiconductor crystal growth, and, in particular, relates to a device used in an apparatus for crystal growth. The instant invention sets forth a heat pipe for crystal growth that is able to operate at high pressure/temperature. A cylindrical heat pipe for use in a crystal growth furnace has walls of tungsten with a layer of titanium deposited thereover to prevent oxidation. Strengthening members are placed between the walls to provide added strength. A wick structure of tungsten is used in the annular chamber to carry a working fluid of lithium.
Descriptors : *PATENT APPLICATIONS, *HEAT PIPES, *CRYSTAL GROWTH, SEMICONDUCTORS, HIGH PRESSURE, OXIDATION
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE