Accession Number : ADD011654

Title :   Heat Pipe and Method of making same.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Ahern,

Report Date : 06 Feb 1985

Pagination or Media Count : 15

Abstract : The present invention relates generally to semiconductor crystal growth, and, in particular, relates to a device used in an apparatus for crystal growth. The instant invention sets forth a heat pipe for crystal growth that is able to operate at high pressure/temperature. A cylindrical heat pipe for use in a crystal growth furnace has walls of tungsten with a layer of titanium deposited thereover to prevent oxidation. Strengthening members are placed between the walls to provide added strength. A wick structure of tungsten is used in the annular chamber to carry a working fluid of lithium.

Descriptors :   *PATENT APPLICATIONS, *HEAT PIPES, *CRYSTAL GROWTH, SEMICONDUCTORS, HIGH PRESSURE, OXIDATION

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE