Accession Number : ADD011663

Title :   Process for the Epitaxial Deposition of III-V Compounds Utilizing a Binary Alloy as the Metallic Source.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Quinlan,K P ; Erstfeld,T E

Report Date : 12 Mar 1985

Pagination or Media Count : 6

Abstract : This patent provides for the deposition of group III-V ternary epitaxial films onto the surfaces of suitable semiconductor substrates. The deposition is accomplished by a vapor phase epitaxy-hydride technique using a group III binary alloy as a group III metal source and phosphine, arsine or stibine as a group V hydride source.

Descriptors :   *PATENTS, *EPITAXIAL GROWTH, SEMICONDUCTORS, ARSINES, BINARY ALLOYS, DEPOSITION, GROUP III COMPOUNDS, GROUP V COMPOUNDS, PHOSPHINE, SEMICONDUCTORS, SUBSTRATES, FILMS, DEFECTS(MATERIALS), FIELD EFFECT TRANSISTORS, LIGHT EMITTING DIODES, LASERS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE