Accession Number : ADD011673

Title :   Heterojunction Schottky Gate Mesfet with Lower Channel Ridge Barrier.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Greene,R F

Report Date : 12 Feb 1985

Pagination or Media Count : 8

Abstract : This invention relates to an FET with an extremely short channel formed by the apex of a substrate ridge structure protruding upward through the channel layer toward a Schottky-barrier gate contact. The device is formed by etching a modulation-doped substrate to form an upwardly protruding ridge with the apex modulation-doped. A semiconductor layer is then disposed over the substrate surface with the protruding ridge to obtain an epitaxial interface therebetween. Source and drain regions are doped into the semiconductor layer on opposite sides of the ridge structure. Finally, ohmic contacts are formed on the semiconductor layer over the source and drain regions and a Schottky-barrier metalization is deposited on the semiconductor layer above the ridge structure. This device has a very short channel, a low transit time, a low gate capacitance, and an enhanced transconductance.

Descriptors :   *PATENTS, *FIELD EFFECT TRANSISTORS, *SEMICONDUCTOR DEVICES, *ELECTRONIC SWITCHES, *GALLIUM ARSENIDES, FABRICATION, SCHOTTKY BARRIER DEVICES, QUICK REACTION, ELECTRIC CONTACTS, EPITAXIAL GROWTH, GATES(CIRCUITS), SHORT RANGE(DISTANCE), CHANNELS, LAYERS, DRAINAGE, DOPING, RIDGES, SUBSTRATES, INTERFACES, HETEROJUNCTIONS, STRUCTURAL PROPERTIES, TRANSCONDUCTANCE, INVENTIONS, ETCHING, SEMICONDUCTORS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE