Accession Number : ADD011698

Title :   Method of Reducing Impurity and Antisite Defects in Semiconductor Crystal Materials, and Device and Apparatus Respectively Produced from and Utilizing Same.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder,M N

Report Date : 22 Mar 1985

Pagination or Media Count : 19

Abstract : The surface of a semiconductor crystalline material is exposed to coherent photon radiation at frequencies chosen to resonate both cation and anion dimers of the doping materials during the growth process. The reduction of cations and anions improved crystal purity and results in a reduction of antisite defects.

Descriptors :   *PATENT APPLICATIONS, *CRYSTALS, *SEMICONDUCTORS, ANIONS, CATIONS, COHERENT RADIATION, CRYSTALS, DIMERS, DOPING, GROWTH(GENERAL), IMPURITIES, MATERIALS, PHOTONS, PURITY, REDUCTION, SEMICONDUCTORS

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE