Accession Number : ADD011815

Title :   P-N Junction Controlled Field Emitter Array Cathode.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Greene,R F ; Gray,H F

Report Date : 23 Apr 1985

Pagination or Media Count : 11

Abstract : A Field Emitter Array comprising a semiconductor substrate with an emitter surface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I max = j sat X A p-n, j sat being the saturation current density and A p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating a electric field that induces the emission of the electron current from the emitter tips. (Author)

Descriptors :   *PATENTS, *CATHODES, *ELECTRON TUBES, *EMITTERS, FIELD EMISSION, SEMICONDUCTOR JUNCTIONS, TRAVELING WAVE TUBES, P TYPE SEMICONDUCTORS, N TYPE SEMICONDUCTORS, AMPLIFIERS, SUBSTRATES, SURFACES, ELECTRIC CURRENT, JUNCTIONS, ELECTRIC FIELDS, SEMICONDUCTORS, PYRAMIDS, CURRENT DENSITY, APERTURES, REVERSIBLE, GRIDS, ELECTRONS, BIAS, ARRAYS, SATURATION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE