Accession Number : ADD011818
Title : W-Shaped Diffused Stripe GaAs/AlGaAs Laser.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Liu,Y Z ; Hong,C S ; Dapkus,D
Report Date : 04 Jun 1985
Pagination or Media Count : 7
Abstract : This patent describes a w-shaped diffused stripe GaAs/AlGaAs (Gallium Arsenide/Aluminium Gallium Arsenide) laser and a method for making the same. A double heterostructure layered structure includes a p-type GaAs active layer in contact with a p-type AlGaAss current blocking layer. These layers are sandwiched between two N-type ALGaAs confinement layers. A p-type zinc diffused stripe region having a w-shaped diffusion front extends longtudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer and through a portion of the lower confinement layer and through portions of the various intervening layers. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc into the device from a source through a pair of parallel slots in a diffusion mask. The zinc diffused into the device is further driven-in by heating the device on the absence of the zinc source.
Descriptors : *PATENTS, *SEMICONDUCTOR LASERS, *INFRARED LASERS, *N TYPE SEMICONDUCTORS, *P TYPE SEMICONDUCTORS, *GALLIUM ARSENIDES, DIFFUSION, EPITAXIAL GROWTH, REFLECTION, PARALLEL ORIENTATION, VAPOR DEPOSITION, LAYERS, ORGANOMETALLIC COMPOUNDS, ZINC, CONFINEMENT(GENERAL), SURFACES, ANNEALING, CHEMICAL REACTIONS, SUBSTRATES, SLOTS, MASKS, ALUMINUM COMPOUNDS, LASERS, BLOCKING, INVENTIONS, SOURCES
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE