Accession Number : ADD011823
Title : A TiW Diffusion Barrier for AuZn Ohmic Contacts to P-Type InP.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Boos,J B ; Papanicolaou,N A ; Weng,T H
Report Date : 27 Jun 1985
Pagination or Media Count : 27
Abstract : This abstract discloses a low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP Semiconductor devices.
Descriptors : *PATENT APPLICATIONS, *P TYPE SEMICONDUCTORS, *SEMICONDUCTOR DEVICES, BARRIERS, DIFFUSION, METALS, RESISTANCE, ELECTRIC CONTACTS, LAYERS, ELECTRIC CONTACTS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE