Accession Number : ADD011823

Title :   A TiW Diffusion Barrier for AuZn Ohmic Contacts to P-Type InP.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Boos,J B ; Papanicolaou,N A ; Weng,T H

Report Date : 27 Jun 1985

Pagination or Media Count : 27

Abstract : This abstract discloses a low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP Semiconductor devices.

Descriptors :   *PATENT APPLICATIONS, *P TYPE SEMICONDUCTORS, *SEMICONDUCTOR DEVICES, BARRIERS, DIFFUSION, METALS, RESISTANCE, ELECTRIC CONTACTS, LAYERS, ELECTRIC CONTACTS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE