Accession Number : ADD011828
Title : Dual Drain Mosfet detector for Crosstie Memory Systems.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Bluzer,N
Report Date : 22 Mar 1985
Pagination or Media Count : 14
Abstract : This patent application discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.
Descriptors : *PATENT APPLICATIONS, *MEMORY DEVICES, *MOSFET SEMICONDUCTORS, BINARY NOTATION, DETECTORS, DRAINAGE, MAGNETIC FIELDS, MATERIALS, CHANNELS, THIN FILMS, SOURCES, GATES(CIRCUITS), SHIFT REGISTERS, STORAGE
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE