Accession Number : ADD011841
Title : Recovery of Fragile Layers Produced on Substrates by Chemical Vapor Deposition.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Addamiano,A ; Klein,P H
Report Date : 23 Apr 1985
Pagination or Media Count : 5
Abstract : This patent pertains to a method of recovering intact at room temperature a layer of a first material, such as silicon carbide, produced by depositing it from the gas phase at a deposition temperature above room temperature on a substrate of a second material, such as silicon, having a different coefficient of thermal expansion than that of the first material. The substrate is separated from the layer prior to cooling, and then the separated layer is cooled to room temperature free of stresses otherwise present as a result of the different thermal expansions of the substrate and layer. The present invention relates generally to coating and more particularly to coating wherein a semiconductor product is produced.
Descriptors : *PATENTS, *SEMICONDUCTING FILMS, *VAPOR DEPOSITION, *SUBSTRATES, LAYERS, FRAGILITY, RECOVERY, SEPARATION, COATINGS, SEMICONDUCTORS, ROOM TEMPERATURE, COEFFICIENTS, THERMAL EXPANSION, SILICON, SILICON CARBIDES, COOLING, MELTING, CHEMICALS
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE