Accession Number : ADD011842

Title :   Method for the Deposition of High-Quality Crystal Epitaxial Films of Iron.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Kaplan,R ; Bottka,N

Report Date : 02 Apr 1985

Pagination or Media Count : 5

Abstract : This patent pertains to a method for forming a single crystal epitaxial film of a selected metal on the surface of a substrate. The method includes the steps of positioning the substrate in an ultra high vacuum environment and exposing the substrate surface to a metalorganic vapor including ions of the selected metal while maintaining an ultra high vacuum environment.

Descriptors :   *PATENTS, *EPITAXIAL GROWTH, *SINGLE CRYSTALS, *METAL FILMS, *IRON, THIN FILMS, SURFACE REACTIONS, ORGANOMETALLIC COMPOUNDS, ULTRAHIGH VACUUM, VAPOR DEPOSITION, SUBSTRATES, METHODOLOGY

Subject Categories : Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE