Accession Number : ADD011907

Title :   Simultaneous Doped Layers for Semiconductor Devices.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Hawrylo,F Z

Report Date : 11 Jun 1985

Pagination or Media Count : 4

Abstract : An indium phosphide semiconductor layer or layers are simultaneously doped with groups II-VI elements such as zinc and selenium. These simultaneously (acceptor/-donor) doped layers offer improved characteristics when used as an ohmic contact capping layer of indium phosphide or as the active laser region in long wavelength light emitting diodes composed of indium phosphide. The simultaneous doping is achieved through the use of liquid phase epitaxy. (Author)

Descriptors :   *PATENTS, *SEMICONDUCTOR DEVICES, *DOPING, INDIUM PHOSPHIDES, LAYERS, MANUFACTURING, ELECTRIC CONTACTS, THERMAL EXPANSION, ELECTROMAGNETIC RADIATION, ELECTRIC CONNECTORS, RELIABILITY, CIRCUITS, LIGHT EMITTING DIODES, EPITAXIAL GROWTH, LIQUID PHASES, ZINC, SELENIUM, LASER CAVITIES

Subject Categories : Fabrication Metallurgy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE