Accession Number : ADD011916

Title :   Chemical Vapor Deposition (CVD) of Cubic Silicon Carbide SiC.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Addamiano,A

Report Date : 02 Jul 1985

Pagination or Media Count : 12

Abstract : The present invention relates to the growth of cubic silicon carbide crystals. More specifically, the present invention relates to the growth of cubic silicon carbide by Chemical Vapor Deposition (CVD). One object of the present invention is to provide a novel method for the production of cubic SiC for high temperature electronic devices. Another object of the present invention is to provide a novel method for the production of highly pure, single crystal cubic SiC that is duplicable. Another object of the present invention is to provide a novel method for the production of large-area single-crystal wafers of cubic SiC. These and other objects of the present invention can be achieved by a method for chemical vapor deposition (CVD) of cubic Silicon Carbide (SiC) comprising the steps of etching silicon substrated having one mechanically polished face; depositing a thin buffer layer of cubic SiC formed by reaction between a heated Si substrate and a H2 C3H8 gas mixuture; and depositing SiC on the buffer layer at high temperature using H2+C3H8+SiH4 mixture.

Descriptors :   *PATENT APPLICATIONS, *VAPOR DEPOSITION, *SINGLE CRYSTALS, *SILICON CARBIDES, BUFFERS, LAYERS, CHEMICAL REACTIONS, ETCHING, SILICON, ELECTRONIC EQUIPMENT, HIGH TEMPERATURE, PRODUCTION, SUBSTRATES, HIGH TEMPERATURE, INVENTIONS, PURITY, LAYERS, THINNESS, SIMPLE CUBIC LATTICES, WAFERS

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE