Accession Number : ADD011926

Title :   Method of Making Self-Aligned IGFET.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Schuermeyer,F L

Report Date : 06 Aug 1985

Pagination or Media Count : 6

Abstract : The IGFET is formed on a GaAs wafer which is coated with a layer of Si3N4 and a SiO2 layer. The SiO2 is etched away in transistor areas, and ion implanting provides channel doping. A gate of refractory metal such as Mo is deposited and delineated. The gate and the SiO2 act as masks for ion implantation of the source and drain. The refractory metal gate allows subsequent annealing at high temperatures to active the ion implanted species. (Author)

Descriptors :   *PATENTS, *FIELD EFFECT TRANSISTORS, *FIELD EFFECT TRANSISTORS, *GATES(CIRCUITS), *GALLIUM ARSENIDES, *ION IMPLANTATION, SELF OPERATION, REFRACTORY METALS, TRANSISTORS, HIGH TEMPERATURE, WAFERS, METALS, MOLYBDENUM, ANNEALING, SILICIDES, DOPING, STRUCTURES, REDUCTION, SELENIUM, ALIGNMENT, SOURCES, INVENTIONS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE