Accession Number : ADD011943

Title :   Zinc-Diffused Narrow Stripe AlGaAs/GaAs Double Heterostructure Laser.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Liu,Y Z ; Hong,C S ; Dapkus,P D ; Coleman,J J

Report Date : 14 May 1985

Pagination or Media Count : 7

Abstract : Document describes a zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser device and a method of making the same. A double heterostructure layered structure including a p-type GaAs active layer sandwiched between two n-type AlGaAs confinement layers is formed on a substrate. A p-type zinc diffused stripe region having a U-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer down to at least the surface of intersection between the active layer and the lower confinement layer. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc from a source through a slot in a diffusion mask. The zinc diffused into the device is driven in by heating the device in the absence of the zinc source. (Author)

Descriptors :   *PATENTS, *SEMICONDUCTOR LASERS, *HETEROJUNCTIONS, ALUMINUM GALLIUM ARSENIDE, DOPING, ZINC, VAPOR DEPOSITION, EPITAXIAL GROWTH, SUBSTRATES, MASKS

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE