Accession Number : ADD011963
Title : LPE (Liquid Phase Epitaxy) Semiconductor Material Transfer Method.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Hawrylo,Frank Z
Report Date : 15 Oct 1985
Pagination or Media Count : 5
Abstract : This is a patent for a method for liquid phase epitaxy maskless deposition of a III-V compound on a substrate in a pre-determined pattern which includes the steps of contacting a growth wafer having a patterned mask ther on to a growth solution in equilibrium and then increasing the temperature of the growth solution and wafer thereby locally melting the exposed portions of the wafer surface and locally changing the equilibrium properties of the growth solution. The substrate upon which the material is to be deposited is then contacted with the growth solution and the temperature lowered. Because of the locally varying equilibrium conditions the constituents of the growth solution will be preferentially deposited on those portions of the portions of the substrate corresponding to the unmasked portions of the growth wafer.
Descriptors : *PATENTS, *EPITAXIAL GROWTH, *SEMICONDUCTORS, SEMICONDUCTOR DEVICES, LIQUID PHASES, DEPOSITION, SURFACES, PLANAR STRUCTURES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, WAFERS, MASKING, LAYERS, MELTING, SOLUTIONS(GENERAL), EQUILIBRIUM(GENERAL), SUBSTRATES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE