Accession Number : ADD011977

Title :   Optically Triggered Bulk Device Gunn Oscillator.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Bovino,Lawrence J ; Weiner,Maurice

Report Date : 28 Oct 1985

Pagination or Media Count : 94

Abstract : A high power solid state source of microwave and millimeter wave signals is provided by an optically triggered body of bulk semiconductor material selected from the Group III-V compounds including GaAs, Cr:GaAs, and Fe:InP and having a relatively long gap length which is in the order of 0.5 to 10.0 mm as well as having a resistivity which is greater than 10 to the 7th power ohm-cm. The device is further dc biased to a field of between 15kV/cm and 35kV/cm. Under such conditions, a very low dc current flows without any oscillatory behavior; however, illumination of the semiconductor body with a fast rising optical pulse having a wavelength suitable for carrier generation causes electrons to be lifted to the conduction band which is accompanied by a rapid reduction of the resistivity. At the same time, the electric field across the gap length decreases to a value just above the oscillation threshold whereupon high power RF oscillations are generated whose frequency is a function of the recombination time of the excited carriers. (Author)

Descriptors :   *PATENT APPLICATIONS, *BULK SEMICONDUCTORS, *GUNN DIODES, *OSCILLATORS, *LIGHT PULSES, *RECOMBINATION REACTIONS, ELECTRIC FIELDS, ELECTRICAL RESISTANCE, ELECTRONS, GROUP III COMPOUNDS, GROUP V COMPOUNDS, HIGH POWER, ILLUMINATION, BEHAVIOR, BODIES, MILLIMETER WAVES, OSCILLATION, CONDUCTION BANDS, RADIOFREQUENCY, BULK MATERIALS, REDUCTION, SEMICONDUCTORS, SIGNALS, THRESHOLD EFFECTS, TIME

Subject Categories : Electrical and Electronic Equipment
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE