Accession Number : ADD011987

Title :   INP:TE Protective Layer Process for Reducing Substrate Dissociation.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Hawrylo,Frank Z

Report Date : 10 Sep 1985

Pagination or Media Count : 4

Abstract : In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellurium to a concentration of about high 10 to the 18th power to low 10 to the 19th power. This invention relates to the fabrication of semiconductor devices, and, more particularly, to the deposition of an epitaxial layer on the surface of an indium phosphide substrate.

Descriptors :   *PATENTS, *INDIUM PHOSPHIDES, *SEMICONDUCTOR DEVICES, *SUBSTRATES, EPITAXIAL GROWTH, DOPING, DEPOSITION, WAFERS, INDIUM, LAYERS, TELLURIUM, LIQUID PHASES, PROTECTIVE EQUIPMENT, DISSOCIATION, INVENTIONS, DROPS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE