Accession Number : ADD012041

Title :   Furnace Transient Anneal Process.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Collins,David A ; Lile,Derek L ; Zeisse,Carl R

Report Date : 26 Nov 1985

Pagination or Media Count : 7

Abstract : A method for annealing semiconductor samples, especially following ion-implantation of semiconductor samples is disclosed. A furnace on a set of rails is passed over the semiconductor sample which is supported on a stationary wire basket made of low thermal mass, fine tungsten wire. The furnace temperature may be about 5 C above the desired anneal temperature of the semiconductor sample such that the sample temperature rises to within a few degrees of the furnace temperature within seconds. Utilizing the moveable furnace insures uniform heating without elaborate temperature control or expensive beam generating equipment. The apparatus and process of the present invention are utilized for rapid annealing of ion-implanted indium phosphide semiconductors within 10 to 30 seconds and at temperature of approximately 700 C., thereby eliminating undesired and damaging movement of impurities within the ion-implanted InP.

Descriptors :   *PATENTS, *ANNEALING, *ELECTRIC FURNACES, SEMICONDUCTORS, INDIUM PHOSPHIDES, HIGH TEMPERATURE, QUICK REACTION, RAILS

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE