Accession Number : ADD012113
Title : Method for Vacuum Baking Indium In-Situ.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Adamski,Joseph A
Report Date : 17 Dec 1985
Pagination or Media Count : 6
Abstract : This invention pertains to a method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vaccuum in an open ended quartz ampoule to a temperature in excess of 850 C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.
Descriptors : *PATENTS, *SEMICONDUCTORS, *INDIUM PHOSPHIDES, *INDIUM, *HEAT TREATMENT, VACUUM, AMPULES, SEALED SYSTEMS, POLYCRYSTALLINE, SINGLE CRYSTALS, PURITY, CRYSTAL GROWTH
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE