Accession Number : ADD012113

Title :   Method for Vacuum Baking Indium In-Situ.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Adamski,Joseph A

Report Date : 17 Dec 1985

Pagination or Media Count : 6

Abstract : This invention pertains to a method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vaccuum in an open ended quartz ampoule to a temperature in excess of 850 C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.

Descriptors :   *PATENTS, *SEMICONDUCTORS, *INDIUM PHOSPHIDES, *INDIUM, *HEAT TREATMENT, VACUUM, AMPULES, SEALED SYSTEMS, POLYCRYSTALLINE, SINGLE CRYSTALS, PURITY, CRYSTAL GROWTH

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE