Accession Number : ADD012184

Title :   Preparation of Refractory Tunnel Barriers of Sputtered Boron Nitride.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Simon,Randy W ; Kihlstrom,Kenneth E ; Claassen,John H

Report Date : 23 Dec 1985

Pagination or Media Count : 10

Abstract : The present invention relates to Josephson Junctions. More specifically the present invention relates to high quality artificial tunnel barriers found in a Josephson junction. A Josephson Junction is a weak connection between two superconducting layers through which the Josephson effect is realized. The Josephson effect Is where the passage of paired electrons (Cooper pairs) through a weak connection forms a current (supercurrent) in addition to the usual current that results from the passage or tunneling of single electrons. Objects of the present invention are to provide a tunnel barrier that has a sharp even interface with the superconducting metal; to provide a tunnel barrier that is amorphous; and to provide a tunnel barrier that does not breakdown under high temperature conditions. These, and other objects of the present invention ar achieved with a Josephson junction comprising: a first superconducting layer; a second superconducting layer; and a tunnel barrier of boron nitride located between the first and second superconducting layers and in contact therewith.

Descriptors :   *PATENT APPLICATIONS, *BORON NITRIDES, *JOSEPHSON JUNCTIONS, *BARRIERS, *TUNNELING(ELECTRONICS), *REFRACTORY MATERIALS, INSULATION, HIGH TEMPERATURE, LAYERS, SUPERCONDUCTORS, TUNNELS, INVENTIONS, ELECTRONS, NITRIDES, METALS

Subject Categories : Ceramics, Refractories and Glass
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE