Accession Number : ADD012185

Title :   Self Aligned Notch for InP Planar Transferred Electron Oscillator.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Binari,Steven C

Report Date : 13 Jan 1986

Pagination or Media Count : 14

Abstract : A method of fabricating a notched indium phosphide planar transferred electron oscillator device which automatically aligns the high-resistivity notch position immediately adjacent to the cathode contact by slant evaporation of a metal coating over the edge of a masking layer followed by ion implantation. (Patent Applications)

Descriptors :   *ION IMPLANTATION, *OSCILLATORS, *MASKING, *PATENT APPLICATIONS, COATINGS, METALS, ELECTRON TRANSFER, PLANAR STRUCTURES, LAYERS, EVAPORATION, SLANT RANGE

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE